An Optimized PECVD SiN Deposition for Borderless Contact Etch-Stop-Layer (ESL) of Sub-0.25 um Logic Devices

An Optimized PECVD SiN Deposition for Borderless Contact Etch-Stop-Layer (ESL) of Sub-0.25 um Logic Devices

Author(s):

Publication title:

Copper Interconnects, New Contact Metallurgies/Structures, and Low-K Interlevel Dielectrics : proceedings of the International Symposium

Title of ser.:

Electrochemical Society Proceedings Series

Ser. no.:

2000-27

Pub. Year:

2000

Page(from):

160

Page(to):

164

Pub. info.:

Pennington, N.J.: Electrochemical Society

ISSN:

01616374

ISBN:

9781566772945 [156677294X]

Language:

English

Call no.:

E23400/200027

Type:

Conference Proceedings

Details

TDL ID:	ZA00013996
Series ID:	PA00000028
Conf. info. (Name):	Symposium on Copper Interconnects, New Contact Metallurgies/Structures, and Low-k Interlevel Dielectrics ; Meeting of the Electrochemical Society
Conf. info. (Number):	2000 ; 198th
Conf. info. (Venue):	Phoenix, AZ, USA
Conf. info. (Date):	2000.10.22-2000.10.27

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