Lifetime and Leakage Current Studies in Shallow P-N Junctions

Lifetime and Leakage Current Studies in Shallow P-N Junctions

Author(s):

Poyai, A.

Publication title:

High Purity Silicon VI : proceedings of the sixth International Symposium

Title of ser.:

Electrochemical Society Proceedings Series

Ser. no.:

2000-17

Pub. Year:

2000

Page(from):

403

Page(to):

413

Pages:

11

Pub. info.:

Bellingham, Wash.: Electrochemical Society

ISSN:

01616374

ISBN:

9781566772846 [1566772842]

Language:

English

Call no.:

E23400/200017

Type:

Conference Proceedings

Details

TDL ID:	ZA00013986
Series ID:	PA00000028
Conf. info. (Name):	International Symposium on High Purity Silicon ; Meeting of the Electrochemical Society
Conf. info. (Number):	6th ; 198th
Conf. info. (Venue):	Phoenix, Arizona, USA
Conf. info. (Date):	2000.10.22-2000.10.27

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