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The Time Dependence of Point Defect Behavior near the Growth Interface in Cz-Si

Author(s):
Publication title:
High Purity Silicon VI : proceedings of the sixth International Symposium
Title of ser.:
Electrochemical Society Proceedings Series
Ser. no.:
2000-17
Pub. Year:
2000
Page(from):
19
Page(to):
30
Pages:
12
Pub. info.:
Bellingham, Wash.: Electrochemical Society
ISSN:
01616374
ISBN:
9781566772846 [1566772842]
Language:
English
Call no.:
E23400/200017
Type:
Conference Proceedings

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