Global Model of Silicon Chemical Vapor Deposition in Centura Reactors

Global Model of Silicon Chemical Vapor Deposition in Centura Reactors

Author(s):

Segal, A.S.

Publication title:

CVD XV, proceedings of the fifteenth International Symposium on Chemical Vapor Deposition

Title of ser.:

Electrochemical Society Proceedings Series

Ser. no.:

2000-13

Pub. Year:

2000

Page(from):

456

Page(to):

463

Pages:

8

Pub. info.:

Pennington, N.J.: Electrochemical Society

ISSN:

01616374

ISBN:

9781566772785 [1566772788]

Language:

English

Call no.:

E23400/200013

Type:

Conference Proceedings

Details

TDL ID:	ZA00013982
Series ID:	PA00000028
Conf. info. (Name):	International Symposium on Chemical Vapor Deposition - CVD
Conf. info. (Number):	15th
Conf. info. (Venue):	Tronto, Ontario, Canada
Conf. info. (Date):	2000.05.14-2000.05.18

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