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Ultra-Shallow P+-N Junctions for 35-70 nm CMOS using Selectively Deposited Very Heavily Boron-doped Silicon-Germanium Films

Author(s):
Publication title:
Rapid thermal and other short-time processing technologies : proceedings of the international symposium
Title of ser.:
Electrochemical Society Proceedings Series
Ser. no.:
2000-9
Pub. Year:
2000
Page(from):
73
Page(to):
82
Pages:
10
Pub. info.:
Pennington, NJ: Electrochemical Society
ISSN:
01616374
ISBN:
9781566772747 [1566772745]
Language:
English
Call no.:
E23400/2000-9
Type:
Conference Proceedings

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