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A New Methodology for a Statistical Evaluation of SILC: Characterization of Stress Conditions and Oxide Technology

Author(s):
Ghidini, G.
Rigamonti, M.
Brazelli, D.
Pellizzer, F.
Martinelli, A.
Galbiati, N.
1 more
Publication title:
The physics and chemistry of SiO2 and the Si-SiO2 interface-4, 2000 : proceedings of the fourth International Symposium on the Physics and Chemistry of SiO2 and the Si-SiO2 Interface, Tronto, Canada, May 15-18, 2000
Title of ser.:
Electrochemical Society Proceedings Series
Ser. no.:
2000-2
Pub. Year:
2000
Page(from):
353
Page(to):
364
Pages:
12
Pub. info.:
Pennington, N.J.: Electrochemical Society
ISSN:
01616374
ISBN:
9781566772679 [1566772672]
Language:
English
Call no.:
E23400/2000-2
Type:
Conference Proceedings

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