Blank Cover Image

Soft and Hard Breakdown of Ultrathin SiO2 Gate Oxides

Author(s):
Publication title:
The physics and chemistry of SiO2 and the Si-SiO2 interface-4, 2000 : proceedings of the fourth International Symposium on the Physics and Chemistry of SiO2 and the Si-SiO2 Interface, Tronto, Canada, May 15-18, 2000
Title of ser.:
Electrochemical Society Proceedings Series
Ser. no.:
2000-2
Pub. Year:
2000
Page(from):
333
Page(to):
344
Pages:
12
Pub. info.:
Pennington, N.J.: Electrochemical Society
ISSN:
01616374
ISBN:
9781566772679 [1566772672]
Language:
English
Call no.:
E23400/2000-2
Type:
Conference Proceedings

Similar Items:

1 Conference Proceedings Mesoscopic transport in broken down ultrathin SiO2 films

Miranda, E., Sune, N., Rodriguez, R., Nafria, M., Aymerich, X.

MRS-Materials Research Society
7 Conference Proceedings Extending the Reliability of SiO2-Based Dielectric to the Nanometer Limit

Wu, E. Y., Sune, J.

Electrochemical Society
2 Conference Proceedings Soft Breakdown in Ultrathin Oxides

Weir, B. E., Silverman, P. J., Alers, G. B., Monroe, D., Alam, M. A., Sorsch, T. W., Green, M. L., Timp, G. L., Ma, Y., …

MRS - Materials Research Society
8 Conference Proceedings A Study of V2O5-K2SO4-SiO2 Catalysts for Catalytic Vapor-Phase Oxidation of Toluene to Benzaldehyde

Rocha, A. O., Jr., Chagas, A. L., Sune, L. S. V. S., Lopes, M. F. S., Pereira, J. A. F. R.

Elsevier
3 Conference Proceedings Modeling Soft Breakdown of Ultrathin Gate Oxide Layers

Houssa, M., Mertens, P. W., Heyns, M. M.

MRS - Materials Research Society
9 Conference Proceedings Ultrathin Oxide Reliability: Effects of Gate Doping Concentration and Poly- Si/SiO2 Interface Stress Relaxation

Wristers, D., Wang, H.H., Han, L.K., Lin, C., Chen, T.S., Kwong, D.L., Fulford, J.

Electrochemical Society
4 Conference Proceedings Soft Breakdown Mechanism in Ultrathin Gate Oxides

Mizubayashi, W., Itokawa, H., Miyazaki, S., Hirose, M.

Electrochemical Society
10 Conference Proceedings Investigation of quasi-breakdown mechanism in ultrathin gate oxides

Guan, Hao, He, Y. D., Li, M. F., Cho, Byung Jin, Dong, Zhong

MRS-Materials Research Society
5 Conference Proceedings Physics-Based Percolation Model of Oxide Breakdown

J. Sune, E. Wu, S. Tous

Electrochemical Society
11 Conference Proceedings *The boundary between hard- and soft-breakdown in ultrathin silicon dioxide films

Toriumi, A., Satake, H.

MRS-Materials Research Society
6 Conference Proceedings From radiation induced leakage current to soft breakdown in irradiated MOS devices with ultrathin gate oxide

Ceschia, M., Paccagnella, A., Cester, A., Ghidini, G., Wyss, J.

MRS-Materials Research Society
12 Conference Proceedings Ultrathin SiO2 and Alternative Gate Dielectrics

Jakubowski,Andrzej, Janik,Tomasz, Korwin-Pawlowski,Michael, Lukasiak,Lidia, Majkusiak,Bogdan

SPIE - The International Society for Optical Engineering
1
 
2
 
3
 
4
 
5
 
6
 
7
 
8
 
9
 
10
 
11
 
12