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Gate Oxide Thinning in MOS Structures with Shallow Trench Isolation

Author(s):
Balasubramanian, N.
Johnson, E.
Perera, C.
Mian, C.-S.
Sheng, T.-T.
Peidous, I.V.
Ping, C.
Cuthbertson, A.
Sundaresan, R.
4 more
Publication title:
The physics and chemistry of SiO2 and the Si-SiO2 interface-4, 2000 : proceedings of the fourth International Symposium on the Physics and Chemistry of SiO2 and the Si-SiO2 Interface, Tronto, Canada, May 15-18, 2000
Title of ser.:
Electrochemical Society Proceedings Series
Ser. no.:
2000-2
Pub. Year:
2000
Page(from):
125
Page(to):
130
Pages:
6
Pub. info.:
Pennington, N.J.: Electrochemical Society
ISSN:
01616374
ISBN:
9781566772679 [1566772672]
Language:
English
Call no.:
E23400/2000-2
Type:
Conference Proceedings

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