Blank Cover Image

MOCVD Growth of Indium Nitride

Author(s):
Publication title:
Compound semiconductor power transistors II : proceedings of the second international symposium and state-of-the-art program on compound semiconductors (SOTAPOCS XXXII) : proceedings of the thirty-second international symposium
Title of ser.:
Electrochemical Society Proceedings Series
Ser. no.:
2000-1
Pub. Year:
2000
Page(from):
189
Page(to):
194
Pages:
6
Pub. info.:
Pennington, N.J.: Electrochemical Society
ISSN:
01616374
ISBN:
9781566772662 [1566772664]
Language:
English
Call no.:
E23400/2000-1
Type:
Conference Proceedings

Similar Items:

1 Conference Proceedings THE GROWTH MECHANISMS OF GaSb EPITAXIAL FILM BY MOCVD

Ueng, H.Y., Chen, S.M., Su, Y.K., Juang, F.S.

Materials Research Society
7 Conference Proceedings Effects of buffer layer growth conditions on the GaN epilayer quality by MOCVD

Juang,F.-S., Su,Y.K., Chang,S.-J., Chu,T.K., Chen,C.S., Chi,L.W., Lam,K.T.

SPIE - The International Society for Optical Engineering
2 Conference Proceedings Growth of Ternary Silicon Carbon Nitride as a New Wide Bandgap Material

Chen, L. C., Chen, C. K., Bhusari, D. M., Chen, K. H., Wei, S. L., Chen, Y. F., Jong, Y. C., Lin, D. Y., Li, C. F., …

MRS - Materials Research Society
8 Conference Proceedings MOCVD Growth and Propertics of InGaN/GaN Multi-Quantum Wells

Keller,S., Abare,A.C., Minsky,M.S., Wu,X.H., Mack,M.P., Speck,J.S., Hu,E., Coldren,L.A., Mishra,U.K., DenBaars,S.P.

Trans Tech Publications
3 Conference Proceedings High-growth-rate epitaxy of InN film by a novel-design MOCVD

Yang,F.-H., Yang,Y.-J., Hwang,J.-H., Lee,C.-H., Chen,K.-H., Lin,C.-Y.

SPIE - The International Society for Optical Engineering
9 Conference Proceedings The Relationship between Surface Pits Density and Growth Parameters during the Epitaxial Growth of 4H-SiC

W.Y. Chen, H.C. Ho, P.F. Yang, L.C. Hsia

Trans Tech Publications
4 Conference Proceedings GaN Growth by Nitrogen ECR-CVD Method

Chen, K. H., Chao, C. H., Chuang, T. J., Yang, Y. J., Chen, L. C., Chen, C. K., Huang, Y. F., Yang, C. H., Lin, H. Y., …

MRS - Materials Research Society
10 Conference Proceedings Deep Impurities in AlGaAs Grown by MOCVD Using Different Hydrogen and Nitrogen as Carrier Gases

Chen, J. C., Huang, Z. C., Yang, Bing, Chen, H. K., Lee, K. J.

MRS - Materials Research Society
5 Conference Proceedings Two-photon optical-beam-induced current microscopy of indium gallium nitride light-emitting diodes

Kao,F.-J., Huang,M.-K., Wang,Y.-S., Huang,S.-L., Lee,M.-K., Sun,C.-K., Cheng,P.

SPIE - The International Society for Optical Engineering
11 Conference Proceedings UHV-MOCVD GROWTH AND IN SITU CHARACTERIZATION OF EPITAXIAL TiO2 FILMS

Chen, Samuel, Gysling, H.J., Paz-Pujalt, G.R., Blanton, T.N., Castro, T., Chen, K.M., Fictorie, C., Gladfelter, W.L., …

Materials Research Society
6 Conference Proceedings Silicon Carbon Nitride Films Deposited by ECR CVD

Chen, K-H., Wu, J.-J., Wen, C.-Y., Chen, L-C., Fan, C.-W, Kuo, P.-F., Chen, Y.-F., Huang, Y.-S.

Electrochemical Society
12 Conference Proceedings Appearance of Indium Oxide Nanorods in MOCVD Growth

Myung, J.H., Kim, H.W., Shim, S.H.

Trans Tech Publications
1
 
2
 
3
 
4
 
5
 
6
 
7
 
8
 
9
 
10
 
11
 
12