Effect of Slurry Abrasive Size on Polish Rate and Surface Quality of Silicon Dioxide Films
- Author(s):
- Publication title:
- Chemical mechanical planariarization in IC device manufacturing III : proceedings of the international symposium
- Title of ser.:
- Electrochemical Society Proceedings Series
- Ser. no.:
- 99-37
- Pub. Year:
- 1999
- Page(from):
- 396
- Page(to):
- 401
- Pages:
- 6
- Pub. info.:
- Pennington, N. J.: Electrochemical Society
- ISSN:
- 01616374
- ISBN:
- 9781566772600 [1566772605]
- Language:
- English
- Call no.:
- E23400/99-37
- Type:
- Conference Proceedings
Similar Items:
Electrochemical Society |
Materials Research Society |
Materials Research Society |
MRS - Materials Research Society |
Materials Research Society |
Materials Research Society |
4
Conference Proceedings
Transient Electrochemical Measurements During Copper Chemical Mechanical Polishing
Materials Research Society |
Materials Research Society |
Materials Research Society |
11
Conference Proceedings
Optimal Size Distribution of CMP Slurries for Enhanced Polishing with Minimal Defects
Electrochemical Society |
6
Conference Proceedings
Effect of Nano-Size Silica Abrasives in Chemical Mechanical Polishing of Copper
Materials Research Society |
MRS - Materials Research Society |