Tunneling Properties of Holes Across InP/InGaAs and AlCaAs/GaAs Heterointerfaces in the Burnt-Foreman Formalism

Tunneling Properties of Holes Across InP/InGaAs and AlCaAs/GaAs Heterointerfaces in the Burnt-Foreman Formalism

Author(s):

Publication title:

Advanced luminescent materials and quantum confinement : proceedings of the international symposium

Title of ser.:

Electrochemical Society Proceedings Series

Ser. no.:

99-22

Pub. Year:

1999

Page(from):

333

Page(to):

347

Pages:

15

Pub. info.:

Pennington, NJ: Electrochemical Society

ISSN:

01616374

ISBN:

9781566772457 [1566772451]

Language:

English

Call no.:

E23400/99-22

Type:

Conference Proceedings

Details

TDL ID:	ZA00013951
Series ID:	PA00000028
Conf. info. (Name):	International Symposium on Advanced Luminescent Materials and Quantum Confinement ; Electrochemical Society Meeting
Conf. info. (Number):	1999 ; 196th
Conf. info. (Venue):	Honolulu, HI, USA
Conf. info. (Date):	1999.10.18-1999.10.20

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