Fine/High Aspect Ratio of SiO2 Hole and Gap Etching

Fine/High Aspect Ratio of SiO2 Hole and Gap Etching

Author(s):

Horiike, Y.

Publication title:

ULSI process integration : proceedings of the first international symposium

Title of ser.:

Electrochemical Society Proceedings Series

Ser. no.:

99-18

Pub. Year:

1999

Page(from):

329

Page(to):

344

Pub. info.:

Pennington, NJ: Electrochemical Society

ISSN:

01616374

ISBN:

9781566772419 [1566772419]

Language:

English

Call no.:

E23400/99-18

Type:

Conference Proceedings

Details

TDL ID:	ZA00013947
Series ID:	PA00000028
Conf. info. (Name):	International Symposium on ULSI Process Integration ; Meeting of the Electrochemical Society
Conf. info. (Number):	1st ; 196th
Conf. info. (Venue):	Honolulu, Hawaii, USA
Conf. info. (Date):	1999.10.17-1999.10.22

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