The Integration of Shallow Trench Isolation (STI) for High Density DRAM with 0.18 μm Technology and Beyond

The Integration of Shallow Trench Isolation (STI) for High Density DRAM with 0.18 μm Technology and Beyond

Author(s):

Pan, P.

Publication title:

ULSI process integration : proceedings of the first international symposium

Title of ser.:

Electrochemical Society Proceedings Series

Ser. no.:

99-18

Pub. Year:

1999

Page(from):

213

Page(to):

222

Pub. info.:

Pennington, NJ: Electrochemical Society

ISSN:

01616374

ISBN:

9781566772419 [1566772419]

Language:

English

Call no.:

E23400/99-18

Type:

Conference Proceedings

Details

TDL ID:	ZA00013947
Series ID:	PA00000028
Conf. info. (Name):	International Symposium on ULSI Process Integration ; Meeting of the Electrochemical Society
Conf. info. (Number):	1st ; 196th
Conf. info. (Venue):	Honolulu, Hawaii, USA
Conf. info. (Date):	1999.10.17-1999.10.22

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