Blank Cover Image

Super Self-Aligned Processing for Sub 0.1 μm MOS Devices Using Selective Si l-xGexCVD

Author(s):
Kikuchi, T.
Yamashiro, T.
Moriya, A.
Noda, T.
Yamamoto, Y.
Deng, C.
Sakuraba, M.
Matsuura, T.
Murota, J.
4 more
Publication title:
ULSI process integration : proceedings of the first international symposium
Title of ser.:
Electrochemical Society Proceedings Series
Ser. no.:
99-18
Pub. Year:
1999
Page(from):
147
Page(to):
156
Pub. info.:
Pennington, NJ: Electrochemical Society
ISSN:
01616374
ISBN:
9781566772419 [1566772419]
Language:
English
Call no.:
E23400/99-18
Type:
Conference Proceedings

Similar Items:

1 Conference Proceedings 0.1 μm MOSFET with Super Self-Aligned Shallow Junction Electrodes

Ishii, M., Goto, K., Sakuraba, M., Matsuura, T., Murota, J., Koyanagi, M.

Electrochemical Society
7 Conference Proceedings Patterning 0.1-μm device by using hybrid PSM

Hsu,C., Chou,R., Wang,T., Liao,C.C.

SPIE-The International Society for Optical Engineering
2 Conference Proceedings Super Self-Aligned Ultrashallow Junction Formation Using Selective Si1-xGex CVD in Deep-Submicron MOSFET'S Fabrication

Goto, K., Murota, J., Honma, F., Matsuura, T., Sawada, Y.

Electrochemical Society
8 Conference Proceedings Phosphorus Doping Effects on Si1-xGex Epitaxial Film Growth in the SiH4-GeH4-PH3 Gas System Using Ultraclean LPCVD

Lee, C.J., Sakuraba, M., Ishii, M., Matsuura, T., Murota, J., Kawashima, I., Yabumoto, N.

Electrochemical Society
3 Conference Proceedings CVD Si1-xGex epitaxial growth and its applications to MOS devices

Murota,J., Sakuraba,M., Matsuura,T.

SPIE - The International Society for Optical Engineering
9 Conference Proceedings Atomic-Layer Adsorption of P on Si(l00) by Using Ultraclean LPCVD

Shimamune, Y., Sakuraba, M., Matsuura, T., Murota, J.

Electrochemical Society
4 Conference Proceedings Low-Temperature Epitaxial Growth of In Situ Heavily B-Doped Si1-xGex Films Using Ultraclean LPCVD

Moriya, A., Sakuraba, M., Matsuura, T., Murota, J., Kawashima, I., Yabumoto, N.

MRS - Materials Research Society
10 Conference Proceedings Surface Termination of the Ge(100) and Si(100) Surfaces by Using DHF Solution Dipping

Sakuraba, M., Matsuura, T., Murota, J.

MRS - Materials Research Society
5 Conference Proceedings IN-SITU HEAVY DOPING OF P AND B IN LOW-TEMPERATURE Si 1-X Ge x EPITAXIAL GROWTH USING ULTRACLEAN LPCVD

Murota, J., Moriya, A., Sakuraba, M., Lee, C.J., Matsuura, T.

Electrochemical Society
11 Conference Proceedings Mix-and-match lithography processes for 0.1-ｦﾌm MOS transistor device fabrication

Yew,J.-Y., Chen,L.-J., Nakamura,K., Chao,T.-S., Lin,H.-C.

SPIE-The International Society for Optical Engineering
6 Conference Proceedings Selective Growth of W at Very Low Temperatures Using a WF6-SiH4 Gas System

Yamamoto, Y., Matsuura, T., Murota, J.

Electrochemical Society
12 Conference Proceedings Doping Process Issues for Sub-0.1 μm Generation MOSFETs

Sugii, Toshihiro, Pidin, Sergey, Momiyama, Youichi, Goto, Ken-ichi, Tanaka, Takuji, Yamamoto, Tomonari, Futatugi, …

Materials Research Society
1
 
2
 
3
 
4
 
5
 
6
 
7
 
8
 
9
 
10
 
11
 
12