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Improved Reliability of Silicon Dioxide in MOS Devices by Nitrogen Pileup at Poly-Si I Silicon Dioxide Interface.

Author(s):
Publication title:
Silicon nitride and silicon dioxide thin insulating films, proceedings of the fifth International Symposium
Title of ser.:
Electrochemical Society Proceedings Series
Ser. no.:
99-6
Pub. Year:
1999
Page(from):
38
Page(to):
44
Pages:
7
Pub. info.:
Pennington, New Jersey: Electrochemical Society
ISSN:
01616374
ISBN:
9781566772280 [1566772281]
Language:
English
Call no.:
E23400/99-6
Type:
Conference Proceedings

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