Electrical Characteristics of Deep-Submicron Vertical SiGe n-MOSFETs

Electrical Characteristics of Deep-Submicron Vertical SiGe n-MOSFETs

Author(s):

Liu, K.-C.

Publication title:

Proceedings of the State-of-the-Art Program on Compound Semiconductors (SOTAPOCs XXX)

Title of ser.:

Electrochemical Society Proceedings Series

Ser. no.:

99-4

Pub. Year:

1999

Page(from):

181

Page(to):

194

Pages:

14

Pub. info.:

Pennington, N. J.: Electrochemical Society

ISSN:

01616374

ISBN:

9781566772266 [1566772265]

Language:

English

Call no.:

E23400/99-4

Type:

Conference Proceedings

Details

TDL ID:	ZA00013934
Series ID:	PA00000028
Conf. info. (Name):	Meeting of the Electrochemical Society
Conf. info. (Number):	195th
Conf. info. (Venue):	Seattle, WA, USA
Conf. info. (Date):	1999.05.02-1999.05.07

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