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Effects of Strain Relaxation on the Carrier Transport Properties on InP-based Pseudomorphic High Electron Mobility Structures

Author(s):
Sandhu, R.S.
Moore, C.D.
Goorsky, M.S.
Wong, L.
Wang, K.L.
Jiang, H.
Chin, T.P.
Wojtowicz, M.
Block, T.R.
Streit, D.C.
5 more
Publication title:
Proceedings of the State-of-the-Art Program on Compound Semiconductors (SOTAPOCs XXX)
Title of ser.:
Electrochemical Society Proceedings Series
Ser. no.:
99-4
Pub. Year:
1999
Page(from):
146
Page(to):
154
Pages:
9
Pub. info.:
Pennington, N. J.: Electrochemical Society
ISSN:
01616374
ISBN:
9781566772266 [1566772265]
Language:
English
Call no.:
E23400/99-4
Type:
Conference Proceedings

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