Drain Conductance Degredation in Gate-All-Around Inversion Mode nMOSFETs with Totai Dose

Drain Conductance Degredation in Gate-All-Around Inversion Mode nMOSFETs with Totai Dose

Author(s):

Vanooren, A ( (University of California, Davis) )
Colinge, I P ( (University of California, Davis) )

Publication title:

Proceedings of the Ninth International Symposium on Silicon-on-Insulator Technology and Devices

Title of ser.:

Electrochemical Society Proceedings Series

Ser. no.:

99-3

Pub. Year:

1999

Page(from):

323

Page(to):

328

Pages:

6

Pub. info.:

Pennington, NJ: Electrochemical Society

ISSN:

01616374

ISBN:

9781566772259 [1566772257]

Language:

English

Call no.:

E23400/99-3

Type:

Conference Proceedings

Details

TDL ID:	ZA00013933
Series ID:	PA00000028
Conf. info. (Name):	International Symposium on Silicon-on-Insulator Technology and Devices ; Meeting of the Electrochemical Society
Conf. info. (Number):	9th ; 195th
Conf. info. (Venue):	Seattle, WA, USA
Conf. info. (Date):	1999.05.02-1999.05.07

Similar Items:

1 Conference Proceedings Gate-All-Around Technology for Harsh Environment Applications Colinge, J.P. Kluwer Academic Publishers	7 Conference Proceedings Drain Leakage Current Behavior in Circular Gate SOI nMOSFETs Operating from Room Temperature up to 573K M. Bellodi, L.M. Almeida Electrochemical Society
2 Conference Proceedings Performance of Double-Gate SOI nMOSFETs at Low Temperature Vandooren, A., Cristoloveanu, S., Colinge, J.P., Flandre, D. Electrochemical Society	8 Conference Proceedings Compact model of the nanoscale gate-all-around MOSFET Jimenez, D., Iniguez, B., Saenz, J. J., Sune, J., Marsal, L. F., Pallares, J. Kluwer Academic Publishers
3 Conference Proceedings Behavior of Graded Channel SOI Gate-All-Around NMOSFET Devices at High Temperatures dos Santos, C. D. G., Pavanello, M. A., Martino, J. A., Flandre, D., Raskin, J.-P. Electrochemical Society	9 Conference Proceedings Fabrication and Characterization of Suspended Uniaxial Tensile Strained-Si Nanowires for Gate-All-Around Nanowire n-MOSFETs P. Hashemi, M. Canonico, J.K.W. Yang, L. Gomez, K.K. Berggren Electrochemical Society
4 Conference Proceedings Dual gate SOI MOSFET: physics and potential Colinge, J P Electrochemical Society	10 Conference Proceedings Study of the Drain Leakage Current Behavior in Circular Gate SOI nMOSFET Using 0.13μm SOI CMOS Technology at High Temperatures L. M. Almeida, M. Bellodi Electrochemical Society
5 Conference Proceedings Multiple-Gate Silicon-On-Insulator MOS Transistor Colinge, J.-P. Electrochemical Society	11 Conference Proceedings Yield-limiting NMOSFET gate depletion in a deep submicrometer CMOS process Karnett,M.P., Qian,S., Mitchell,T., Subramaniam,V., Sur,H., Haby,B.J., Brugge,H.B. SPIE-The International Society for Optical Engineering
6 Conference Proceedings Evolution of SOI MOSFETs: From Single Gate to Multiple Gates Colinge, Jean-Pierre Materials Research Society	12 Conference Proceedings Sub-Half Micron Elevated Source/Drain NMOSFETS by Low Temperature Selective Epitaxial Deposition Sun, J., Bartholomew, R. F., Bellur, K., O'Neil, P. A., Srivastava, A., Violette, K. E., Ozturk, M. C., Osburn, C. M., … MRS - Materials Research Society

1

2

3

4

5

6

7

8

9

10

11

12