Parameter Extraction for Buried Oxide Traps from High-Temperature Kink Effect of Back- Channel SOI TM n-MOSFET

Parameter Extraction for Buried Oxide Traps from High-Temperature Kink Effect of Back- Channel SOI TM n-MOSFET

Author(s):

Nazarov, A N ( (Institute of Semiconductor Physics, NASU) )
Barchuk, I P ( (Institute of Semiconductor Physics, NASU) )
Lysenko, V S L ( (Institute of Semiconductor Physics, NASU) )
Colinge, J P ( (University of California, Davis) )

Publication title:

Proceedings of the Ninth International Symposium on Silicon-on-Insulator Technology and Devices

Title of ser.:

Electrochemical Society Proceedings Series

Ser. no.:

99-3

Pub. Year:

1999

Page(from):

299

Page(to):

304

Pages:

6

Pub. info.:

Pennington, NJ: Electrochemical Society

ISSN:

01616374

ISBN:

9781566772259 [1566772257]

Language:

English

Call no.:

E23400/99-3

Type:

Conference Proceedings

Details

TDL ID:	ZA00013933
Series ID:	PA00000028
Conf. info. (Name):	International Symposium on Silicon-on-Insulator Technology and Devices ; Meeting of the Electrochemical Society
Conf. info. (Number):	9th ; 195th
Conf. info. (Venue):	Seattle, WA, USA
Conf. info. (Date):	1999.05.02-1999.05.07

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