Simulation of Self Heating Effects in Heterojunction Bipolar Thansistors Fabricated in Wafer Bonded SOI Substrates
- Author(s):
- Armstrong, G A ( (Queens University Belfast) )
- Gamble, H S ( (Queens University Belfast) )
- Publication title:
- Proceedings of the Ninth International Symposium on Silicon-on-Insulator Technology and Devices
- Title of ser.:
- Electrochemical Society Proceedings Series
- Ser. no.:
- 99-3
- Pub. Year:
- 1999
- Page(from):
- 249
- Page(to):
- 254
- Pages:
- 6
- Pub. info.:
- Pennington, NJ: Electrochemical Society
- ISSN:
- 01616374
- ISBN:
- 9781566772259 [1566772257]
- Language:
- English
- Call no.:
- E23400/99-3
- Type:
- Conference Proceedings
Similar Items:
1
Conference Proceedings
Investigation of the Electrical Properties of Bonded Silicon-on-Isolator Wafers
Electrochemical Society |
Electrochemical Society |
2
Conference Proceedings
Characterisation of SOI Thin Film Transistors Fabricated Using SiGe Etch Stop Layers
Electrochemical Society |
SPIE-The International Society for Optical Engineering |
Electrochemical Society |
Electrochemical Society |
Kluwer Academic Publishers |
Electrochemical Society |
5
Conference Proceedings
A Comparison of Bipolar Devises in Bonded and Trenches Wafers with junction and Trench Isolated Bulk Wafers
Electrochemical Society |
Electrochemical Society |
Electrochemical Society |
12
Conference Proceedings
Silicon Wafer Direct Bonding for Smart-Cut SOI with Buried Tungsten Silicide Layer
Electrochemical Society |