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AB INITIO CALCULATIONS OF As-VACANCY INTERACTIONS IN SILICON

Author(s):
Publication title:
Proceedings of the Fifth International Symposium of Process Physics and Modeling in Semiconductor Technology
Title of ser.:
Electrochemical Society Proceedings Series
Ser. no.:
99-2
Pub. Year:
1999
Page(from):
165
Page(to):
176
Pages:
12
Pub. info.:
Pennington, New Jersey: Electrochemical Society
ISSN:
01616374
ISBN:
9781566772242 [1566772249]
Language:
English
Call no.:
E23400/99-2
Type:
Conference Proceedings

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