Point Defect Generation by the Stress Due to Impurity Doping in Silicon Crystal
- Author(s):
- Publication title:
- Proceedings of the Third International Symposium on Defects in Silicon
- Title of ser.:
- Electrochemical Society Proceedings Series
- Ser. no.:
- 99-1
- Pub. Year:
- 1999
- Page(from):
- 491
- Page(to):
- 498
- Pages:
- 8
- Pub. info.:
- Pennington, NJ: Electrochemical Society
- ISSN:
- 01616374
- ISBN:
- 9781566772235 [1566772230]
- Language:
- English
- Call no.:
- E23400/99-1
- Type:
- Conference Proceedings
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