Blank Cover Image

High Quality SilxGex Epitaxial Growth by CVD

Author(s):
Publication title:
Proceedings of the Third International Symposium on Defects in Silicon
Title of ser.:
Electrochemical Society Proceedings Series
Ser. no.:
99-1
Pub. Year:
1999
Page(from):
189
Page(to):
202
Pages:
14
Pub. info.:
Pennington, NJ: Electrochemical Society
ISSN:
01616374
ISBN:
9781566772235 [1566772230]
Language:
English
Call no.:
E23400/99-1
Type:
Conference Proceedings

Similar Items:

1 Conference Proceedings CVD Si1-xGex epitaxial growth and its applications to MOS devices

Murota,J., Sakuraba,M., Matsuura,T.

SPIE - The International Society for Optical Engineering
7 Conference Proceedings (12.5) 8:05 - 8:35 PM - Low-Temperature SiGe(C) Epitaxial Growth by Ultraclean Hot-Wall Low-Pressure CVD (Invited)

Murota, J., Sakuraba, M. (Tohoku University)

Electrochemical Society
2 Conference Proceedings ATOMIC-LAYER DOPING OF N IN Si EPITAXIAL GROWTH ON Si(100) AND ITS THERMAL SABILITY

Jeong, Y., Sakuraba, M., Matsuura, T., Murota, J.

Electrochemical Society
8 Conference Proceedings Atomic-Order Layer Growth of Silicon Nitride Films at Low Temperatures

Watanabe, T., Sakuraba, M., Matsuura, T., Murota, J.

Electrochemical Society
3 Conference Proceedings ATOMIC-LAYER DOPING OF N IN Si EPITAXIAL GROWTH ON Si(100) AND ITS THERMAL STABILITY

Jeong, Y., Sakuraba, M., Matsuura, T., Murota, J.

Electrochemical Society
9 Conference Proceedings H-TERMINATION ON Ge (100) AND Si (100) BY DILUTED HF DIPPING AND BY ANNEALING IN H2

Sakuraba, M., Matsuura, T., Murota, J.

Electrochemical Society
4 Conference Proceedings Low-Temperature Epitaxial Growth of In Situ Heavily B-Doped Si1-xGex Films Using Ultraclean LPCVD

Moriya, A., Sakuraba, M., Matsuura, T., Murota, J., Kawashima, I., Yabumoto, N.

MRS - Materials Research Society
10 Conference Proceedings Atomic-Layer Adsorption of P on Si(l00) by Using Ultraclean LPCVD

Shimamune, Y., Sakuraba, M., Matsuura, T., Murota, J.

Electrochemical Society
5 Conference Proceedings IN-SITU HEAVY DOPING OF P AND B IN LOW-TEMPERATURE Si 1-X Ge x EPITAXIAL GROWTH USING ULTRACLEAN LPCVD

Murota, J., Moriya, A., Sakuraba, M., Lee, C.J., Matsuura, T.

Electrochemical Society
11 Conference Proceedings Surface Termination of the Ge(100) and Si(100) Surfaces by Using DHF Solution Dipping

Sakuraba, M., Matsuura, T., Murota, J.

MRS - Materials Research Society
6 Conference Proceedings Phosphorus Doping Effects on Si1-xGex Epitaxial Film Growth in the SiH4-GeH4-PH3 Gas System Using Ultraclean LPCVD

Lee, C.J., Sakuraba, M., Ishii, M., Matsuura, T., Murota, J., Kawashima, I., Yabumoto, N.

Electrochemical Society
12 Conference Proceedings Si Epitaxial Growth on Atomic-Order Nitrided Si (100) using an ECR Plasma

Mori, M., Seino, T., Muto, D., Sakuraba, M., Murota, J.

Electrochemical Society
1
 
2
 
3
 
4
 
5
 
6
 
7
 
8
 
9
 
10
 
11
 
12