Effects of Growth Parameters on the Performance of μc-Si Thin Film Transistors Deposited Using SiF4

Effects of Growth Parameters on the Performance of μc-Si Thin Film Transistors Deposited Using SiF4

Author(s):

Publication title:

Proceedings of the fourth Symposium on Thin Film Transistor Technologies

Title of ser.:

Electrochemical Society Proceedings Series

Ser. no.:

98-22

Pub. Year:

1998

Page(from):

221

Page(to):

229

Pages:

9

Pub. info.:

Pennington, NJ: Electrochemical Society

ISSN:

01616374

ISBN:

9781566772167 [1566772168]

Language:

English

Call no.:

E23400/98-22

Type:

Conference Proceedings

Details

TDL ID:	ZA00013925
Series ID:	PA00000028
Conf. info. (Name):	Symposium on Thin Film Transistor Technologies - TFTT
Conf. info. (Number):	4th
Conf. info. (Venue):	Boston, Massachusetts, USA
Conf. info. (Date):	1998.11.02-1998.11.04

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