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*In-Situ Monitoring during MOCVD of GaN

Author(s):
Publication title:
Proceedings of the third Symposium on III-V Nitride Materials and Processes
Title of ser.:
Electrochemical Society Proceedings Series
Ser. no.:
98-18
Pub. Year:
1998
Page(from):
137
Page(to):
144
Pages:
8
Pub. info.:
Pennington, NJ: Electrochemical Society
ISSN:
01616374
ISBN:
9781566772129 [1566772125]
Language:
English
Call no.:
E23400/98-18
Type:
Conference Proceedings

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