Blank Cover Image

Accurate Infrared Absorption Measurement of Interstitial and Precipitated Oxygen in Heavily Doped Silicon

Author(s):
De Gryse, O.
Clauws, P.
Rossou, L.
Van Landuyt, J.
Vanhellemont, J.
Mondelaers, W.
1 more
Publication title:
Proceedings of the Fifth International Symposium on High Purity Silicon V
Title of ser.:
Electrochemical Society Proceedings Series
Ser. no.:
98-13
Pub. Year:
1998
Page(from):
398
Page(to):
409
Pub. info.:
Pennington, NJ: Electrochemical Society
ISSN:
01616374
ISBN:
9781566772075 [1566772079]
Language:
English
Call no.:
E23400/98-13
Type:
Conference Proceedings

Similar Items:

1 Conference Proceedings Chemical and Structural Characterization of Oxide Precipitates in Heavily Boron Doped Silicon by Infrared Spectroscopy and Transmission Electron Microscopy

Gryse, O. De, Clauws, P., Vanhellemont, J., Lebedev, O., Van Landuyt, J., Simoen, E., Claeys, C.

Electrochemical Society
7 Conference Proceedings ON THE ELECTRICAL ACTIVITY OF OXYGEN-RELATED EXTENDED DEFECTS IN SILICON

Vanhellemont, J., Simoen, E., Bosman, G., Claeys, C., Kaniava, A., Gaubas, E., Blondeel, A., Clauws, P.

Electrochemical Society
2 Conference Proceedings Determination of stoichiometry and oxygen content in platelike and octahedral oxygen precipitates in silicon with FT-IT spectroscopy

Gryse,O.De, Clauws,P., Vanhellemont,J., Claeys,C.

Trans Tech Publications
8 Conference Proceedings On the Recombination Activity of Oxygen Precipitation Related Lattice Defects in Silicon

Vanhellemont, J., Kaniava, A., Libezny, M., Simoen, E., Kissinger, G., Gaubas, E., Claeys, C., Clauws, P.

MRS - Materials Research Society
3 Conference Proceedings On the Nucleation and Growth of Bulk Stacking Faults in Cz Silicon

Vanhellemont, J., De Gryse, O., Clauws, P.

Electrochemical Society
9 Conference Proceedings DEGRADATION AND RECOVERY OF BORON DOPED STRAINED SILICON GERMANIUM LAYERS AFTER 1-MeV ELECTRON IRRADIATION

Ohyama, H., Vanhellemont, J., Trauwaert, M.-A., Poortmans, J., Caymax, M., Clauws, P.

Materials Research Society
4 Conference Proceedings Monitoring of Neutron Transmutation Doped Silicon Recombination Properties by Microwave Absorption Transient Techniques

Gaubas, E., Vanhellemont, J., Simoen, E., Claeys, C., Clauws, P., Kraner, H.W., Vilkelis, G.

Electrochemical Society
10 Conference Proceedings SUBSTRATE AND PARTICLE DEPENDENT DEEP LEVEL GENERATION IN SILICON BY MeV PARTICLE BEAMS

Trauwaert, M.-A., Vanhellemont, J., Simoen, E., Claeys, C., Johlander, B., Harboe-Sorensen, R., Adams, L., Clauws, P.

Materials Research Society
5 Conference Proceedings Low-Temperature Infrared Absorption Measurement for Oxygen Concentration and Precipitates in Heavily-Doped Silicon Wafers

Koizuka, M., Inaba, M., Yamada-Kaneta, H.

MRS - Materials Research Society
11 Conference Proceedings THE ROLE OF POINT DEFECTS IN THE NUCLEATION OF FILM EDGE INDUCED DISLOCATIONS IN SILICON.

VANHELLEMONT,J., CLAEYS,C., LANDUYT,J.VAN

Trans Tech Publications
6 Conference Proceedings Ge content dependence of the infrared spectrum of interstitial oxygen in crystalline Si-Ge

Wauters,D., Clauws,P.

Trans Tech Publications
12 Conference Proceedings Infrared absorption by interstitial oxygen in germaniumdoped silicon crystal

Yamada-Kaneta,H., Kaneta,C., Ogawa,T.

Trans Tech Publications
1
 
2
 
3
 
4
 
5
 
6
 
7
 
8
 
9
 
10
 
11
 
12