Diffusion Model of Point Defects in Silicon Crystals During Melt-Growth

Diffusion Model of Point Defects in Silicon Crystals During Melt-Growth

Author(s):

Publication title:

Proceedings of the Fifth International Symposium on High Purity Silicon V

Title of ser.:

Electrochemical Society Proceedings Series

Ser. no.:

98-13

Pub. Year:

1998

Page(from):

41

Page(to):

54

Pub. info.:

Pennington, NJ: Electrochemical Society

ISSN:

01616374

ISBN:

9781566772075 [1566772079]

Language:

English

Call no.:

E23400/98-13

Type:

Conference Proceedings

Details

TDL ID:	ZA00013916
Series ID:	PA00000028
Conf. info. (Name):	International Symposium on High Purity Silicon ; Meeting of the Elecrochemical Society
Conf. info. (Number):	5th ; 194th
Conf. info. (Venue):	Boston, MA, USA
Conf. info. (Date):	1998.11.02-1998.11.06

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