Blank Cover Image

GaInP/InGaAs Pseudomorphic HEMT Grown by Gas Source Molecular Beam Epitaxy with High Power Performance

Author(s):
Zaknoune, M.
Piotrowicz, S.
Schuller, O.
Mollot, F.
Theron, D.
Crosnier, Y.
1 more
Publication title:
Compound semiconductor power transistors and : State-of-the-Art Program on Compound Semiconductors (SOTAPOCS XXIX)
Title of ser.:
Electrochemical Society Proceedings Series
Ser. no.:
98-12
Pub. Year:
1998
Page(from):
123
Page(to):
130
Pub. info.:
Pennington, N. J.: Electrochemical Society
ISSN:
01616374
ISBN:
9781566772228 [1566772222]
Language:
English
Call no.:
E23400/98-12
Type:
Conference Proceedings

Similar Items:

1 Conference Proceedings Metamorphic HEMTs: A Future Technology for Power in Millimeter Wave Range?

Theron, D., Zaknoune, M., Cordier, Y., Piotrowicz, S., Bonte, B., Crosnier, Y.

Electrochemical Society
7 Conference Proceedings CHARACTERIZATION OF MODULATION DOPED PSEUDOMORPHIC A1GaAs/InGaAs/GaAs HEMT STRUCTURES BY ELECTRON BEAM ELECTROEREFLECTANCE AND PHOTOLUMINESCENCE

Herman, M.H., Ward, I.D., Kopf, R.F., Pearton, S.J., Jones, E.D.

Materials Research Society
2 Conference Proceedings High Performance Pseudomorphic InGaP/InGaAs Power HEMTs

Ren, F., Lothian, J.P., Tseng, K., Kuo, J.M., Lin, J., Weiner, J.S., Ryan, R.W., Tate, A., Chen, Y.K.

Electrochemical Society
8 Conference Proceedings *STRUCTURAL PERFECTION OF InGaAs/InP SUPERLATTICES GROWN BY GAS SOURCE MOLECULAR BEAM EPITAXY: A HIGH-RESOLUTION X-RAY DIFFRACTION STUDY

vanderberg, J. M., Panish, M. B., Hamm,. R. A.

Materials Research Society
3 Conference Proceedings High-performance quantum cascade lasers grown by gas-source molecular beam epitaxy

Razeghi,M., Slivken,S., Tahraoui,A., Matlis,A.W.

SPIE-The International Society for Optical Engineering
9 Conference Proceedings INTERFACIAL QUALITY OF STRAINED-LAYER InGaAs/GaAs QUANTUM WELL LASERS GROWN BY GAS-SOURCE MOLECULAR BEAM EPITAXY

Zhang, G., Ovtchinnikov, A., Pessa, M.

Materials Research Society
4 Conference Proceedings On the Investigation of Power and Reliability Performance of Pseudomorphic AlGaAs/InGaAs HEMTs

Li, G.P., Chou, Y.C., Wu, C.S., Yu, K.K., Chen, Y.C., Chu, P., Hu, L.D., Midford, T.A.

Electrochemical Society
10 Conference Proceedings CHARACTERIZATION OF InGaAs/InP EPITAXIAL LAYERS GROWN OVER V-GROOVE PATTERNED InP SUBSTRATES USING GAS SOURCE MOLECULAR BEAM EPITAXY

Bulitka, N. J., Gupta, A., Robinson, B. J., Thompson, D. A., Weatherly, G. C., Simmons, J. G.

MRS - Materials Research Society
5 Conference Proceedings Investigation into Molecular Beam Epitaxy-Grown FETs and HEMTs

Mottet S., Dumas M. J.

Kluwer Academic Publishers
11 Conference Proceedings STRUCTURAL DEFECTS IN GaN EPILAYERS GROWN BY GAS SOURCE MOLECULAR BEAM EPITAXY

Sitar, Z., Paisley, M.J., Yan, B., Davis, R.F.

Materials Research Society
6 Conference Proceedings High-power 600-nm-range lasers grown by solid-source molecular beam epitaxy

Orsila,S.L., Toivonen,M., Savolainen,P., Vilokkinen,V., Melanen,P., Pessa,M., Saarinen,M.J., Uusimaa,P., Corvini,P., …

SPIE - The International Society for Optical Engineering
12 Conference Proceedings *High-quality AlGaN/GaN grown on sapphire by gas-source molecular beam epitaxy using a thin low-temperature AlN layer

Jurkovic, M. J., Li, L. K., Turk, B., Wang, W. I., Syed, S., Simonian, D., Stormer, H. L.

MRS-Materials Research Society
1
 
2
 
3
 
4
 
5
 
6
 
7
 
8
 
9
 
10
 
11
 
12