AlGaN/GaN Piezoelectric HEMT's with Submicron Gates on Sapphire

AlGaN/GaN Piezoelectric HEMT's with Submicron Gates on Sapphire

Author(s):

Publication title:

Compound semiconductor power transistors and : State-of-the-Art Program on Compound Semiconductors (SOTAPOCS XXIX)

Title of ser.:

Electrochemical Society Proceedings Series

Ser. no.:

98-12

Pub. Year:

1998

Page(from):

46

Page(to):

51

Pub. info.:

Pennington, N. J.: Electrochemical Society

ISSN:

01616374

ISBN:

9781566772228 [1566772222]

Language:

English

Call no.:

E23400/98-12

Type:

Conference Proceedings

Details

TDL ID:	ZA00013915
Series ID:	PA00000028
Conf. info. (Name):	Meeting of the Electrochemical Society
Conf. info. (Number):	194th
Conf. info. (Venue):	Boston, MA, USA
Conf. info. (Date):	1998.11.01-1998.11.06

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