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Dual Salicide and Self-aligned Metal Gate Formation for Sub-0.25μm CMOS Technologies Using CMP

Author(s):
Publication title:
Proceedings of the Second International Symposium on Chemical Mechanical Planariarization [sic] in Integrated Circuit Device Manufacturing
Title of ser.:
Electrochemical Society Proceedings Series
Ser. no.:
98-7
Pub. Year:
1998
Page(from):
19
Page(to):
25
Pub. info.:
Pennington, N. J.: Electrochemical Society
ISSN:
01616374
ISBN:
9781566772013 [156677201X]
Language:
English
Call no.:
E23400/98-7
Type:
Conference Proceedings

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