InAlAs/InGa-As HBT with Superlattice Confinement Emitter
- Author(s):
- Publication title:
- Proceedings of the Symposium on Light Emitting Devices for Optoelectronic Applications and the Twenty-Eighth State-of-the-Art Program on Compound Semiconductors
- Title of ser.:
- Electrochemical Society Proceedings Series
- Ser. no.:
- 98-2
- Pub. Year:
- 1998
- Page(from):
- 555
- Page(to):
- 563
- Pub. info.:
- Pennington, NJ: Electrochemical Society
- ISSN:
- 01616374
- ISBN:
- 9781566771948 [1566771943]
- Language:
- English
- Call no.:
- E23400/98-2
- Type:
- Conference Proceedings
Similar Items:
Electrochemical Society |
7
Conference Proceedings
Low Voltage Operation Phototransistor with InGaP/AIGaAs/GaAs Composite Emitter
Electrochemical Society |
Electrochemical Society |
Electrochemical Society |
Electrochemical Society |
9
Conference Proceedings
AN EVALUATION OF IMPLANTATION-DISORDERING OF (InGa)As/GaAs STRAINED-LAYER SUPERLATTICES
Materials Research Society |
Electrochemical Society |
10
Conference Proceedings
Observation of Current Gain Collapse in Large-area HBT with Rectangular Emitter and Etched Base
Electrochemical Society |
5
Conference Proceedings
New n+-GaAs/Δ(p+)-GaInP/n-GaAs Camel-Gate HFET with High Breakdown Voltage and Low Leakage Current
Electrochemical Society |
Materials Research Society |
6
Conference Proceedings
APPLICATION OF GaAs-A1GaAs SUPERLATTICE STRUCTURE FOR FABRICATING HIGH BREAKDOWN VOLTAGE POWER MISFET
Materials Research Society |
Electrochemical Society |