GATE?CONTROLLED PN JUNCTION LEAKAGE CURRENT FOR WIDE RANGE OF PERIMETER-TO-AREA RATIOS-AN INCREASE IN THE LEAKAGE CURRENT CAUSED BY DEFECTS RELATED TO OXYGEN PRECIPITATION AND ITS TEMPERATURE DEPENDENCE -

GATE?CONTROLLED PN JUNCTION LEAKAGE CURRENT FOR WIDE RANGE OF PERIMETER-TO-AREA RATIOS-AN INCREASE IN THE LEAKAGE CURRENT CAUSED BY DEFECTS RELATED TO OXYGEN PRECIPITATION AND ITS TEMPERATURE DEPENDENCE -

Author(s):

Publication title:

Silicon materials science and technology : proceedings of the Eighth International Symposium on Silicon Materials Science and Technology

Title of ser.:

Electrochemical Society Proceedings Series

Ser. no.:

98-1(2)

Pub. Year:

1998

Page(from):

1262

Page(to):

1273

Pages:

12

Pub. info.:

Pennington, NJ: Electrochemical Society

ISSN:

01616374

ISBN:

9781566771931 [1566771935]

Language:

English

Call no.:

E23400/98-1

Type:

Conference Proceedings

Details

TDL ID:	ZA00013904
Series ID:	PA00000028
Conf. info. (Name):	International Symposium on Silicon Materials Science and Technology
Conf. info. (Number):	8th
Conf. info. (Venue):	San Diego, CA, USA
Conf. info. (Date):	1998.05.04-1998.05.08

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