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INVITED: INTRINSIC POINT DEFECTS AND REACTIONS IN THE GROWTH OF LARGE SILICON CRYSTALS

Author(s):
Falster, R.
Voronkov, V.V.
Holzer, J.C.
Markgrafh, S.
McQuaid, S.A.
Mule'Stagno, L.
1 more
Publication title:
Silicon materials science and technology : proceedings of the Eighth International Symposium on Silicon Materials Science and Technology
Title of ser.:
Electrochemical Society Proceedings Series
Ser. no.:
98-1(1)
Pub. Year:
1998
Page(from):
468
Page(to):
489
Pages:
22
Pub. info.:
Pennington, NJ: Electrochemical Society
ISSN:
01616374
ISBN:
9781566771931 [1566771935]
Language:
English
Call no.:
E23400/98-1
Type:
Conference Proceedings

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