Rare Earth Doping of III-V Nitride Semiconductors
- Author(s):
- Zavada, J.M.
- Publication title:
- Proceedings of the Second Symposium on III-V Nitride Materials and Processes
- Title of ser.:
- Electrochemical Society Proceedings Series
- Ser. no.:
- 97-34
- Pub. Year:
- 1997
- Page(from):
- 261
- Page(to):
- 271
- Pub. info.:
- Pennington, NJ: Electrochemical Society
- ISSN:
- 01616374
- ISBN:
- 9781566771870 [1566771870]
- Language:
- English
- Call no.:
- E23400/97-34
- Type:
- Conference Proceedings
Similar Items:
Electrochemical Society |
7
Conference Proceedings
Magnetic Doping of III-V Nitrides and Novel Room Temperature Sensing Applications
Electrochemical Society |
Electrochemical Society |
MRS - Materials Research Society |
3
Conference Proceedings
Evaluation of Erbium Doped III-Nitride Semiconductors for Optoelectronic Applications
Electrochemical Society |
Electrochemical Society |
SPIE - The International Society of Optical Engineering |
Materials Research Society |
5
Conference Proceedings
Ionization Energies of Rare Earth Impurities in III-V and II-VI Semiconductor Compounds
Trans Tech Publications |
11
Conference Proceedings
Hydrogen Implantation in III-V Compound Semiconductors and its Redistribution with Annealing
Trans Tech Publications |
Electrochemical Society |
12
Conference Proceedings
Rare earth doped gallium nitride layers for photonics applications [6180-44]
SPIE - The International Society of Optical Engineering |