Blank Cover Image

Homoepitaxially Grown Boron-Doped Diamond Thin Film Using Trimethylboron as a Dopant by Microwave Plasma-Assisted Chemical Vapor Deposition

Author(s):
Saito, T.
Ohtsubo, K.
Tsuruga, S.
Kameta, M.
Maeda, H.
Kusakabe, K.
Morooka, S.
Kiyota, Hideo
3 more
Publication title:
Proceedings of the Fifth International Symposium on Diamond Materials
Title of ser.:
Electrochemical Society Proceedings Series
Ser. no.:
97-32
Pub. Year:
1997
Page(from):
88
Page(to):
95
Pub. info.:
Pennington, N.J.: Electrochemical Society
ISSN:
01616374
ISBN:
9781566771856 [1566771854]
Language:
English
Call no.:
E23400/97-32
Type:
Conference Proceedings

Similar Items:

1 Conference Proceedings Epitaxial Growth of Diamond on an Iridium (100) Substrate by Microwave Plasma-Assisted Chemical Vapor Deposition

Tsubota, T., Tsuruga, S., Saito, T., Kusakabe, K., Morooka, S., Maeda, H.

MRS - Materials Research Society
7 Conference Proceedings Organic Routes to Chlorination and Subsequent Butylation of Diamond Surface

Ikeda, Y., Egawa, S., Saito, T., Kusakabe, K., Morooka, S., Maede, H., Taniguchi, Y., Fujiwara, Y.

Electrochemical Society
2 Conference Proceedings Deep UV Excitation Raman Spectroscopy of Homoepitaxial 4H-SiC Films Grown by Microwave Plasma Chemical Vapor Deposition

Okamoto, M., Kosugi, R., Nakashima, S., Fukuda, K., Arai, K.

Trans Tech Publications
8 Conference Proceedings Thermal Stability of Nanocrystalline Diamond Films Grown by Microwave Plasma Chemical Vapor Deposition

Bulut, Mevlut, Catledge, Shane A., Vohra, Yogesh K., Camata, Renato P.

Materials Research Society
3 Conference Proceedings Characterization of Ge-Doped Homoepitaxial Layers Grown by Chemical Vapor Deposition

T. Sledziewski, S. Beljakowa, K. Alassaad, P. Kwasnicki, R. Arvinte

Trans Tech Publications
9 Conference Proceedings Homoepitaxial 4H-SiC Films Grown by Microwave Plasma Chemical Vapor Deposition

Okamoto, Mitsuo, Kosugi, Ryoji, Nakashima, Shinichi, Fukuda, Kenji, Arai, Kazuo

Materials Research Society
4 Conference Proceedings Homoepitaxial Growth of 4H-SiC Thin Film Below 1000oC by Microwave Plasma Chemical Vapor Deposition

Okamoto, M., Kosugi, R., Tanaka, Y., Takeuchi, D., Nakashima, S., Nishizawa, S., Fukuda, K., Okushi, H., Arai, K.

Trans Tech Publications
10 Conference Proceedings Homoepitaxial Growth of Si by Remote Plasma Chemical Vapor Deposition

Habermehl, S., Lucovsky, G.

American Institute of Chemical Engineers
5 Conference Proceedings Homoepitaxial Growth of 4H-SiC Thin Film Below 1000oC by Microwave Plasma Chemical Vapor Deposition

Okamoto, Mitsuo, Kosugi, R., Tanaka, Y., Takeuchi, D., Nakashima, S., Nishizawa, S., Fukuda, K., Okushi, H., Arai, K.

Trans Tech Publications
11 Conference Proceedings In Situ S-Doping of Cubic Boron Nitride Thin Films by Plasma Enhanced Chemical Vapor Deposition

H.S. Yang, N. Kurebayashi, T. Yoshida

Trans Tech Publications
6 Conference Proceedings AN INVESTIGATION INTO THE USE OF A DIFFUSION BARRIER IN THE MICROWAVE PLASMA ASSISTED CHEMICAL VAPOR DEPOSITION OF DIAMOND ON IRON BASED SUBSTRATES

Weiser, Paul S., Prawer, S., Hoffman, A., Manory, R., Paterson, P.J.K., Stuart, S-A.

Materials Research Society
12 Conference Proceedings Chemical Vapor Deposition of Boron Phosphide Thin Films

Julia K.C. Abbott, J. Daniel Brasfield, Philip D. Rack, Gerd J. Duscher, Charles S. Feigerle

Materials Research Society
1
 
2
 
3
 
4
 
5
 
6
 
7
 
8
 
9
 
10
 
11
 
12