Growth of Dielectric Ta2O5/HfO2 Thin Film Nanolaminate Capacitors by Atomic Layer Epitaxy

Growth of Dielectric Ta2O5/HfO2 Thin Film Nanolaminate Capacitors by Atomic Layer Epitaxy

Author(s):

Publication title:

Proceedings of the Symposium on Interconnect and Contact Metallization

Title of ser.:

Electrochemical Society Proceedings Series

Ser. no.:

97-31

Pub. Year:

1997

Page(from):

36

Page(to):

46

Pub. info.:

Pennington, NJ: Electrochemical Society

ISSN:

01616374

ISBN:

9781566771849 [1566771846]

Language:

English

Call no.:

E23400/97-31

Type:

Conference Proceedings

Details

TDL ID:	ZA00013893
Series ID:	PA00000028
Conf. info. (Name):	Symposium on Interconnect and Contact Metallization ; Fall Meeing of the Electrochemical Society
Conf. info. (Number):	1997 ; 1997
Conf. info. (Venue):	Paris, France
Conf. info. (Date):	1997.08.31-1997.09.05.

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