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Characterization of deep levels in oxygen-implanted silicon wafers by capacitance deep level transient spectroscopy

Author(s):
Kang, H.S.
Ahn, C.G.
Lee, S.H.
Kim, K.I.
Kang, B.K.
Bae, Y.H.
Kwon, Y.K.
2 more
Publication title:
Proceedings of the Eighth International Symposium on Silicon-on-Insulator Technology and Devices
Title of ser.:
Electrochemical Society Proceedings Series
Ser. no.:
97-23
Pub. Year:
1997
Page(from):
155
Page(to):
161
Pub. info.:
Pennington, NJ: Electrochemical Society
ISSN:
01616374
ISBN:
9781566771764 [1566771765]
Language:
English
Call no.:
E23400/97-23
Type:
Conference Proceedings

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