Annealing effects in the delamination of H+ implanted silicon

Annealing effects in the delamination of H+ implanted silicon

Author(s):

Hara, T.

Publication title:

Proceedings of the Eighth International Symposium on Silicon-on-Insulator Technology and Devices

Title of ser.:

Electrochemical Society Proceedings Series

Ser. no.:

97-23

Pub. Year:

1997

Page(from):

33

Page(to):

38

Pub. info.:

Pennington, NJ: Electrochemical Society

ISSN:

01616374

ISBN:

9781566771764 [1566771765]

Language:

English

Call no.:

E23400/97-23

Type:

Conference Proceedings

Details

TDL ID:	ZA00013885
Series ID:	PA00000028
Conf. info. (Name):	International Symposium on Silicon-on-Insulator Technology and Devices ; Meeting of the Electrochemical Society ; Annual Meeting of the International Society of Electrochemistry
Conf. info. (Number):	8th ; 192nd ; 48th
Conf. info. (Venue):	Paris, France
Conf. info. (Date):	1997.08.31-1997.09.05

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