Crystal originated particles (COPs), bulk defects including the OSF ring, gate oxide integrity (GOI), and DRAM yield

Crystal originated particles (COPs), bulk defects including the OSF ring, gate oxide integrity (GOI), and DRAM yield

Author(s):

Publication title:

Proceedings of the Symposium on Crystalline Defects and Contamination, their Impact and Control in Device Manufacturing II

Title of ser.:

Electrochemical Society Proceedings Series

Ser. no.:

97-22

Pub. Year:

1997

Page(from):

153

Page(to):

172

Pub. info.:

Pennington, NJ: Electrochemical Society

ISSN:

01616374

ISBN:

9781566771757 [1566771757]

Language:

English

Call no.:

E23400/97-22

Type:

Conference Proceedings

Details

TDL ID:	ZA00013884
Series ID:	PA00000028
Conf. info. (Name):	Symposium on Crystalline Defects and Contamination ; Symposium on Silicon Cleaning Technology ; Meeting of the Electrochemical Society ; Annual Meeting of the International Society of Electrochemistry
Conf. info. (Number):	2nd ; 1997 ; 192nd ; 48th
Conf. info. (Venue):	Paris, France
Conf. info. (Date):	1997.08.31-1997.09.02

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