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Highly Reliable Raised Source/Drain Formation Process by Selective Si Deposition for 50 nm Junction-Depth MOSFETs

Author(s):
Publication title:
ULSI science and technology, 1997 : proceedings of the Sixth International Symposium on Ultralarge Scale Integration Science and Technology
Title of ser.:
Electrochemical Society Proceedings Series
Ser. no.:
97-3
Pub. Year:
1997
Page(from):
335
Page(to):
346
Pub. info.:
Pennington, NJ: Electrochemical Society
ISSN:
01616374
ISBN:
9781566771306 [1566771307]
Language:
English
Call no.:
E23400/970512
Type:
Conference Proceedings

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