Base Design for Pnp InAlAs-InGaAs Heterojunction Bipolar Transistors

Base Design for Pnp InAlAs-InGaAs Heterojunction Bipolar Transistors

Author(s):

Publication title:

Proceedings of the twenty-sixth State-of-the-Art Program on Compound Semiconductors (SOTAPOCS XXVI)

Title of ser.:

Electrochemical Society Proceedings Series

Ser. no.:

97-1

Pub. Year:

1997

Page(from):

272

Page(to):

287

Pub. info.:

Pennington, NJ: Electrochemical Society

ISSN:

01616374

ISBN:

9781566771283 [1566771285]

Language:

English

Call no.:

E23400/970510

Type:

Conference Proceedings

Details

TDL ID:	ZA00013862
Series ID:	PA00000028
Conf. info. (Name):	State-of-the-Art Program on Compound Semiconductors - SOTAPOCS ; Meeting of the Electrochemical Society
Conf. info. (Number):	26th ; 191st
Conf. info. (Venue):	Montreal, Quebec, Canada
Conf. info. (Date):	1997.05.04-1997.05.09

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