Blank Cover Image

An Investigation of Single and Dual Type 'Crystal Originated Particles'

Author(s):
Publication title:
Proceedings of the Fourth International Symposium on High Purity Silicon
Title of ser.:
Electrochemical Society Proceedings Series
Ser. no.:
96-13
Pub. Year:
1996
Page(from):
357
Page(to):
368
Pub. info.:
Pennington, NJ: Electrochemical Society
ISSN:
01616374
ISBN:
9781566771566 [1566771560]
Language:
English
Call no.:
E23400/963433
Type:
Conference Proceedings

Similar Items:

1 Conference Proceedings Influence of Crystal-Originated Pits on Ultra-Thin Gate Oxides

Gonzalez,F., Seacrist,M.R., Binns,M.J., Wang,A., Pirooz,S., Barbour,R.

SPIE - The International Society for Optical Engineering
7 Conference Proceedings Secondary Defect Formation and Gettering in MeV Self-Implanted Silicon

Brown, R. A., Kononchuk, O., Radzimski, Z., Rozgonyi, G. A., Gonzalez, F.

MRS - Materials Research Society
2 Conference Proceedings Ring-Related Defects in MCZ Wafer Comparison by Electrical, Structural, and Device Properties

Gonzalez, F., McQueen, M., Barbour, R., Rozgonyi, G. A.

MRS - Materials Research Society
8 Conference Proceedings Q-switching with a dual mode single crystal photo-elastic modulator

F. Bammer, R. Petkovsek, B. Schulz, M. Frede

Society of Photo-optical Instrumentation Engineers
3 Conference Proceedings Crystal originated particles (COPs), bulk defects including the OSF ring, gate oxide integrity (GOI), and DRAM yield

Rozgonyi, G., Tamatsuka, M., Bae, K.-M., Gonzales, F.

Electrochemical Society
9 Conference Proceedings SURFACE RECOMBINATION VELOCITY AND RECOMBINATION LIFETIME IN IRON CONTAMINATED SILICON

Buczkowski, A., Shimura, F., Rozgonyi, G.A.

Electrochemical Society
4 Conference Proceedings Effect of Oxidation Induced Stacking Fault (OSF) Ring on Generation and Motion of Slip Dislocation

Gonzalez,F., Thakur,R.P.S., Bondarenko,I., Zhong,Q., Rozgonyi,G.A.

SPIE-The International Society for Optical Engineering
10 Conference Proceedings Non-Contact Full Wafer Evaluation of Deep Levels in Silicon Via Temperature Dependent Surface Recombination Velocity, and Carrier Lifetime

Buczkowski, A., Rozgonyi, G.A., Shimura, F.

Electrochemical Society
5 Conference Proceedings Gettering of Fe, Cu and Ni in MeV Ion Implanted Epitaxial Silicon

Koveshnikov, S., Kononchuk, O., Beaman, K., Rozgonyi, G.A., Gonzalez, F.

Electrochemical Society
11 Conference Proceedings Dislocation nucleation, growth and suppression during CW laser annealing of silicon

Rozgonyi, G.A., Baumgart, H., Phillipp, F.

North Holland
6 Conference Proceedings Secondary Defect Formation and Gettering in MeV Self-Implanted Silicon

Brown, R. A., Kononchuk, O., Radzimski, Z., Rozgonyi, G. A., Gonzalez, F.

MRS - Materials Research Society
12 Conference Proceedings Fast scanned energy beam induced explosive crystallization of ion implantation amorphized poly and single crystal silicon substrates

Lerme, M., D'Ouville, T. Ternisien, Vu, Duy-Phack, Perio, A., Rozgonyi, G.A., Nguyen, V.T.

North Holland
1
 
2
 
3
 
4
 
5
 
6
 
7
 
8
 
9
 
10
 
11
 
12