Ab-initio study of nitrogen antisites in GaN and InN

Ab-initio study of nitrogen antisites in GaN and InN

Author(s):

Publication title:

Proceedings of the First Symposium on III-V Nitride Materials and Processes

Title of ser.:

Electrochemical Society Proceedings Series

Ser. no.:

96-11

Pub. Year:

1996

Page(from):

205

Page(to):

211

Pub. info.:

Pennington, NJ: Electrochemical Society

ISSN:

01616374

ISBN:

9781566771634 [1566771633]

Language:

English

Call no.:

E23400/962353

Type:

Conference Proceedings

Details

TDL ID:	ZA00013844
Series ID:	PA00000028
Conf. info. (Name):	Symposium on III-V Nitride Materials and Processes
Conf. info. (Number):	1st
Conf. info. (Venue):	Los Angeles, CA. USA
Conf. info. (Date):	1996.05.06-1996.05.08

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