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Growth of InGaN films and InGaN/AlGaN multiple quantum wells produced by molecular beam epitaxy

Author(s):
Publication title:
Proceedings of the First Symposium on III-V Nitride Materials and Processes
Title of ser.:
Electrochemical Society Proceedings Series
Ser. no.:
96-11
Pub. Year:
1996
Page(from):
186
Page(to):
196
Pub. info.:
Pennington, NJ: Electrochemical Society
ISSN:
01616374
ISBN:
9781566771634 [1566771633]
Language:
English
Call no.:
E23400/962353
Type:
Conference Proceedings

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