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Shallow dopants and the role of hydrogen in epitaxial layers of Gallium Nitride (GaN)

Author(s):
Gotz, W.
Johson, N.M.
Bour, D.P.
Chen, C.
Liu, H.
Imler, W.
1 more
Publication title:
Proceedings of the First Symposium on III-V Nitride Materials and Processes
Title of ser.:
Electrochemical Society Proceedings Series
Ser. no.:
96-11
Pub. Year:
1996
Page(from):
87
Page(to):
99
Pub. info.:
Pennington, NJ: Electrochemical Society
ISSN:
01616374
ISBN:
9781566771634 [1566771633]
Language:
English
Call no.:
E23400/962353
Type:
Conference Proceedings

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