Development of High Quality Amorphous SiC Films by PECVD - The Effect of SiH4/CH4 Ratio on Film Properties

Development of High Quality Amorphous SiC Films by PECVD - The Effect of SiH4/CH4 Ratio on Film Properties

Author(s):

Publication title:

Proceedings of the Thirteenth International Symposium on Chemical Vapor Deposition

Title of ser.:

Electrochemical Society Proceedings Series

Ser. no.:

96-5

Pub. Year:

1996

Page(from):

745

Page(to):

749

Pages:

5

Pub. info.:

Pennington, NJ: Electrochemical Society

ISSN:

01616374

ISBN:

9781566771559 [1566771552]

Language:

English

Call no.:

E23400/962104

Type:

Conference Proceedings

Details

TDL ID:	ZA00013838
Series ID:	PA00000028
Conf. info. (Name):	International Symposium on Chemical Vapor Deposition - CVD
Conf. info. (Number):	13th
Conf. info. (Venue):	Los Angeles, CA, USA
Conf. info. (Date):	1996.05.05-1996.05.10

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