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Experimental Study of In-Situ Arsenic-Doped Polysilicon Growth Using a Fast Wafer-Rotating CVD Reactor

Author(s):
Publication title:
Proceedings of the Thirteenth International Symposium on Chemical Vapor Deposition
Title of ser.:
Electrochemical Society Proceedings Series
Ser. no.:
96-5
Pub. Year:
1996
Page(from):
384
Page(to):
389
Pages:
6
Pub. info.:
Pennington, NJ: Electrochemical Society
ISSN:
01616374
ISBN:
9781566771559 [1566771552]
Language:
English
Call no.:
E23400/962104
Type:
Conference Proceedings

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