A Study of MOVPE GaN Gas Phase Chemistry for Reactor Design and Optimization
- Author(s):
- Publication title:
- Proceedings of the Thirteenth International Symposium on Chemical Vapor Deposition
- Title of ser.:
- Electrochemical Society Proceedings Series
- Ser. no.:
- 96-5
- Pub. Year:
- 1996
- Page(from):
- 119
- Page(to):
- 124
- Pub. info.:
- Pennington, NJ: Electrochemical Society
- ISSN:
- 01616374
- ISBN:
- 9781566771559 [1566771552]
- Language:
- English
- Call no.:
- E23400/962104
- Type:
- Conference Proceedings
Similar Items:
MRS - Materials Research Society |
MRS - Materials Research Society |
MRS - Materials Research Society |
Materials Research Society |
3
Conference Proceedings
Optimization of Reactor Geometry and Growth Conditions for GaN Halide Vapor Phase Epitaxy
MRS - Materials Research Society |
9
Conference Proceedings
Effect of Growth Parameters and Local Gas-Phase Concentrations on the Uniformity and Material Properties of GaN/Sapphire Grown by Hydride Vapor-Phase Epitaxy
MRS - Materials Research Society |
4
Conference Proceedings
High Temperature Gas Phases Reactions of Trimethylgallium with Ammonia and Trimethylamine
MRS - Materials Research Society |
Electrochemical Society |
5
Conference Proceedings
GAS-PHASE DECOMPOSITION KINETICS OF MOVPE PRECURSORS IN A COUNTERFLOW JET REACTOR
Materials Research Society |
MRS - Materials Research Society |
MRS-Materials Research Society |
12
Conference Proceedings
STUDY OF SILICON INCORPORATION IN GaAs MOVPE LAYERS GROWN WITH TERTIARYBUTYLARSINE
MRS - Materials Research Society |