Ultrathin Oxide Reliability: Effects of Gate Doping Concentration and Poly-Si/SiO2 Interface Stress Relaxation

Ultrathin Oxide Reliability: Effects of Gate Doping Concentration and Poly-Si/SiO2 Interface Stress Relaxation

Author(s):

Publication title:

The physics and chemistry of SiO[2] and the Si-SiO[2] interface-3, 1996 : proceedings of the Third International Symposium on the Physics and Chemistry of SiO[2] and the Si-SiO[2] Interface

Title of ser.:

Electrochemical Society Proceedings Series

Ser. no.:

96-1

Pub. Year:

1996

Page(from):

744

Page(to):

752

Pages:

9

Pub. info.:

Pennington, NJ: Electrochemical Society

ISSN:

01616374

ISBN:

9781566771511 [156677151X]

Language:

English

Call no.:

E23400/962115

Type:

Conference Proceedings

Details

TDL ID:	ZA00013835
Series ID:	PA00000028
Conf. info. (Name):	International Symposium on the Physics and Chemistry of SiO2 and the Si-SiO2 Interface
Conf. info. (Number):	3rd
Conf. info. (Venue):	Los Angeles, CA, USA
Conf. info. (Date):	1996.05.05-1996.05.10

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