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Oxygen Exchange at the Si/SiO2 Interface and Defect Creation Associated with High-Temperature Process Steps

Author(s):
Publication title:
The physics and chemistry of SiO[2] and the Si-SiO[2] interface-3, 1996 : proceedings of the Third International Symposium on the Physics and Chemistry of SiO[2] and the Si-SiO[2] Interface
Title of ser.:
Electrochemical Society Proceedings Series
Ser. no.:
96-1
Pub. Year:
1996
Page(from):
265
Page(to):
281
Pages:
17
Pub. info.:
Pennington, NJ: Electrochemical Society
ISSN:
01616374
ISBN:
9781566771511 [156677151X]
Language:
English
Call no.:
E23400/962115
Type:
Conference Proceedings

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